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DMP2004TK
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
* * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
* * * * * * * *
SOT-523
Case: SOT-523 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.002 grams (approximate)
Drain
D
Gate
ESD PROTECTED
TOP VIEW
Gate Protection Diode
G
Source
S
Equivalent Circuit
TOP VIEW
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 3)
@TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 85C ID IDM Value -20 8 -430 -310 -750 Units V V mA mA
Characteristic
Steady State
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 150 833 -55 to +150 Units mW C/W C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes: 1. 2. 3. 4. 5.
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min -20 -0.5 200 Typ 0.7 1.1 1.7 Max -1.0 1.0 -1.0 1.1 1.6 2.4 -1.4 175 30 20 Unit V A A V ms V pF pF pF Test Condition VGS = 0V, ID = -250mA VDS = -20V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = 0.2A VGS = 0V, IS = -115mA VDS = -16V, VGS = 0V f = 1.0MHz
Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1% Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect.
DMP2004TK
Document number: DS30932 Rev. 4 - 2
1 of 4 www.diodes.com
March 2009
(c) Diodes Incorporated
DMP2004TK
-ID, DRAIN CURRENT (A)
0
0 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
-ID, DRAIN CURRENT (A)
-VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
-VGS(th), GATE THRESHOLD VOLTAGE (V) TA, AMBIENT TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
-ID, DRAIN-SOURCE CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
-ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
-ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current
DMP2004TK
Document number: DS30932 Rev. 4 - 2
2 of 4 www.diodes.com
March 2009
(c) Diodes Incorporated
DMP2004TK
TA, AMBIENT TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature
-VDS, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage 150
120
90
60
30
0
-ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current
-VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance
Ordering Information
Part Number DMP2004TK-7
Notes:
(Note 6) Case SOT-523 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September)
PAB
YM
Date Code Key Year Code Month Code
2006 T Jan 1 Feb 2
2007 U Mar 3 Apr 4
2008 V May 5 Jun 6
2009 W Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
DMP2004TK
Document number: DS30932 Rev. 4 - 2
3 of 4 www.diodes.com
March 2009
(c) Diodes Incorporated
DMP2004TK Package Outline Dimensions
A
BC
G H K M
N
J
D
L
SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0 8 All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMP2004TK
Document number: DS30932 Rev. 4 - 2
4 of 4 www.diodes.com
March 2009
(c) Diodes Incorporated

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